Control of unintentional oxygen incorporation in GaN
Control of unintentional oxygen incorporation in GaN
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DOI：
10.1116/1.4975925
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发表时间：
2017-03-01
影响因子：
1.4
通讯作者：
Mikolajick, Thomas
中科院分区：
文献类型：
--
作者：
Schmult, Stefan;Schubert, Felix;Mikolajick, Thomas
研究了生长温度对GaN和AlGaN分子束外延材料中无意氧掺入的影响及其对材料电学和光学性能的影响。特别是，晶体管的开关特性，磁输运轨迹，和周围600和665摄氏度生长的样品的光致发光光谱进行了比较。发现当将生长温度增加到类似于60 ℃时，GaN和Al 0.1Ga 0.9N中的无意氧的掺入减少了1个数量级。665摄氏度的生长温度导致氧背景浓度为1 × 10（17）cm（-3），同时导致GaN材料电绝缘。(C)2017年美国真空学会。
The impact of growth temperature on the unintentional oxygen incorporation in GaN and AlGaN grown by molecular beam epitaxy and the consequences for electrical and optical properties are investigated. In particular, transistor switching characteristics, magneto-transport traces, and photoluminescence spectra of samples grown around 600 and 665 degrees C are compared. It is found that the incorporation of unintentional oxygen in GaN and Al0.1Ga0.9N is reduced by 1 order of magnitude upon increasing the growth temperature by similar to 60 degrees C. A growth temperature of 665 degrees C results in an oxygen background concentration of 1 x 10(17) cm(-3) and simultaneously in electrically insulating GaN material. (C) 2017 American Vacuum Society.