Smoothing of (111) oriented Cu films by post-deposition in situ 20-100 eV Ar ion bombardment
Smoothing of (111) oriented Cu films by post-deposition in situ 20-100 eV Ar ion bombardment
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DOI：
10.1116/1.1795825
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发表时间：
2004-10
期刊：
影响因子：
--
通讯作者：
J. Kools;A. Devasahayam
中科院分区：
文献类型：
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作者：
J. Kools;A. Devasahayam
通过实验和分子动力学模拟研究了低能（20-100eV）氩轰击对（111）取向Cu薄膜表面粗糙度的影响。我们发现，在实验和模拟之间有很好的一致性，在这个范围内的所有能量都可以诱导表面粗糙度的显著降低。然而，最佳平滑的入射角在很大程度上取决于离子能量，因此，使用较低的能量在接近法向入射角时效率更高，而在非法向角度（例如，>45度）使用较高的能量效率更高。
We have studied the effect of low energy (20–100eV) Ar bombardment on the surface roughness of (111) oriented Cu films both experimentally and by molecular-dynamics simulations. We found, in good agreement between the experiments and the simulations, that a significant reduction of the surface roughness can be induced at all energies in this range. However, the angle of incidence for optimal smoothing depends strongly on the ion energy, whereby the lower energies used are more efficient at near normal incidence, and the higher energies are more efficient for off-normal angles (e.g., >45degrees).