The phonon drag and diffusion thermopower of Si inversion layers
The phonon drag and diffusion thermopower of Si inversion layers
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Si反转层的声子阻力和扩散热电势
DOI：
10.1088/0953-8984/2/3/021
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
P. N. Butcher
中科院分区：
文献类型：
--
作者：
B. Gallagher;J. P. Oxley;T. Galloway;M. Smith;P. N. Butcher
新的准确结果的热电势的Si反型层进行了比较与计算的屏蔽声子拖曳热电势。除了在最低温度下，当观察到正热电势的符号变化时，温度依赖性和幅度都得到了很好的一致性。作者解释这是由于与表面粗糙度散射相关的扩散热电势。
New accurate results for the thermopower of Si inversion layers are compared with the calculated screened phonon-drag thermopower. Good agreement is obtained for both the temperature dependence and the magnitude, except at the lowest temperatures, when a change of sign to positive thermopower is observed. This the authors interpret as being due to the diffusion thermopower associated with surface roughness scattering.