Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements
Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements
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DOI：
10.1063/1.2012526
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发表时间：
2005-08
影响因子：
4
通讯作者：
J. Mantese;A. Micheli;N. W. Schubring;R. Hayes;G. Srinivasan;S. Alpay
中科院分区：
文献类型：
--
作者：
J. Mantese;A. Micheli;N. W. Schubring;R. Hayes;G. Srinivasan;S. Alpay
组成梯度铁氧体形成为半导体结器件的磁性类似物。内部或“内置”磁场是结构固有的，并由铁磁共振显微镜确定。磁分析的镍-锌-铁氧体系统在其空间相关的序参数，磁化强度，产生一个值的内部磁场与实验观察一致。我们的研究结果扩展到一般类的铁电和其他“智能”材料通过空间依赖的自由能势。
Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction devices. The internal, or the “built-in,” magnetic field is intrinsic to the structure and is determined from ferromagnetic resonance microscopy. Magnetic analysis of a nickel–zinc–ferrite system in terms of its spatially dependent order parameter, the magnetization, yields a value for the internal magnetic field consistent with experimental observations. Our results are extended to the general class of ferroic and other “smart” materials via a spatially dependent free-energy potential.