Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)
Chemical configuration of nitrogen in ultrathin Si oxynitride on Si(100)
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Si(100)上超薄氮氧化硅中氮的化学构型
DOI：
10.1103/physrevb.66.035312
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发表时间：
2002
影响因子：
3.7
通讯作者：
H. Shin
中科院分区：
文献类型：
--
作者：
Jeong Won Kim;H. Yeom;Yong‐Duck Chung;K. Jeong;C. Whang;M. K. Lee;H. Shin
使用同步辐射的高分辨率光电子能谱研究了 Si(100) 上非常薄的氮氧化物薄膜中氮的化学键结构。对NO和N 2 O快速热处理氮化的氮氧化物薄膜进行了系统比较。两种薄膜都解析出两个不同的 N 1s 成分，其结合能差为 ∼0.61 eV，分别分配给界面处的 N 原子和 SiO 2 基体中的 N 原子。这两种成分都明确地归因于代表具有三个最近相邻的 Si 原子的 N-Si 3 类化学构型。这些组件之间 0.61 eV 的能量转移被认为是由于次近邻效应与芯孔屏蔽相结合造成的。讨论了 N 2 O 氮化膜和 NO 氮化膜之间的差异以及由 Si 2p 核心能级识别的界面低氧化物种类。
Chemical bonding structures of nitrogen within very thin oxynitride films on Si(100) have been investigated by high-resolution photoemission spectroscopy using synchrotron radiation. The oxynitride films nitrided by the rapid thermal process with NO and N 2 O are systematically compared. Two distinct N 1s components are resolved for both films with a binding-energy difference of ∼0.61 eV, which are assigned to the N atoms at the interfaces and those in the SiO 2 matrix. Both components are unambiguously attributed to represent a N-Si 3 like chemical configuration with three nearest-neighbor Si atoms. The energy shift of 0.61 eV between these components is thought be due to the second-nearest-neighbor effect combined with core-hole screening. The difference between N 2 O- and NO-nitrided films and the interface suboxide species identified by Si 2p core levels are discussed.