Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs
Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs
复制标题
高压Si和SiC功率MOSFET自开通现象的对比研究
DOI：
10.1587/elex.10.20130744
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
T. Funaki
中科院分区：
文献类型：
--
作者：
T. Funaki
高电压快速开关引起的高dv/dt会导致相邻功率MOSFET因栅电压波动而误触发。这就是所谓的自启动现象。通过突然施加漏极电压对米勒电容充电，易受攻击的功率MOSFET的栅极电压会增加，即使栅极驱动电路保持导通状态。本文从理论上推导了栅压特性的模型方程，并从静态C-V特性和动态特性两个方面对高压Si超结MOSFET和SiC MOSFET的栅压特性进行了实验比较。结果表明，SiC MOSFET的栅电压不受高压快速开关操作的影响。
: High dv/dt caused by the fast switching of high voltage induces misfiring of adjacent power MOSFETs by a fluctuating gate voltage. This is known as the self turn-on phenomenon. The gate voltage of vulnerable power MOSFETs is increased by charging the Miller capacitance with the abrupt application of a drain voltage, even though the gate drive circuit maintains the off condition. This study analytically derives the model equation of gate voltage behavior and experimentally compares the difference in the phenomena between high-voltage Si super-junction MOSFETs and SiC MOSFETs on the basis of static C − V and dynamic characteristics. The results show that the gate voltage of SiC MOSFETs is insusceptible to a high-voltage fast switching operation.