Modeling of an Uncooled CMOS THz Thermal Detector With Frequency-Selective Dipole Antenna and PTAT Temperature Sensor
Modeling of an Uncooled CMOS THz Thermal Detector With Frequency-Selective Dipole Antenna and PTAT Temperature Sensor
复制标题
具有选频偶极子天线和 PTAT 温度传感器的非冷却 CMOS THz 热探测器的建模
DOI：
10.1109/jsen.2017.2785334
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发表时间：
2018-02-15
影响因子：
4.3
通讯作者：
Li, Zimeng
中科院分区：
文献类型：
--
作者：
Chen, Fei;Yang, Jiao;Li, Zimeng
提出了一种基于商用CMOS工艺的室温热型太赫兹探测器。THz电磁波首先被在金属化层中实现的片上λ/4偶极天线选择性地吸收。吸收的波能然后通过多晶硅电阻器转换成焦耳热能。热产生的温升最终由与绝对温度成比例的传感器检测。对探测器的电磁能量吸收、热转换和电路响应等机理进行了理论分析和物理建模。采用标准0.18 μ m CMOS工艺设计了1，2.9和28.3 THz三个典型THz频率的探测器，并进行了后模拟，以说明探测器在整个THz范围内的频率选择能力。模拟探测器的电压响应度在1 THz时为18.0 V/W，在2.9 THz时为18.9 V/W，在28.3 THz时为18.6 V/W。噪声等效功率为1.7 μ W/根赫兹在三个频率。
A thermal THz detector based on commercial CMOS technology working in room temperature is proposed. The THz electromagnetic wave is first selectively absorbed by an on-chip lambda/4 dipole antenna realized in the metallization layer. The absorbed wave energy is then converted to Joule heat energy via a polysilicon resistor. The heat-generated temperature rise is finally detected by a proportional to absolute temperature sensor. The theoretical analysis and physical modeling of the detector including the mechanism of the electromagnetic energy absorption, the thermal conversion, and the electrical circuit response, are presented. The detectors at three typical THz frequencies of 1, 2.9, and 28.3 THz are designed in standard 0.18-mu m CMOS technology and post-simulated to illustrate the detector's frequency-selective capability in the whole THz range. The simulated detector's voltage responsivity is 18.0 V/W at 1 THz, 18.9 V/W at 2.9 THz, and 18.6 V/W at 28.3 THz, respectively. The noise equivalent power is 1.7 mu W/root Hz at the three frequencies.