Laser Writing of Scalable Single Color Centers in Silicon Carbide
Laser Writing of Scalable Single Color Centers in Silicon Carbide
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DOI：
10.1021/acs.nanolett.8b05070
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发表时间：
2019-04-01
期刊：
影响因子：
10.8
通讯作者：
Wrachtrup, Joerg
中科院分区：
文献类型：
--
作者：
Chen, Yu-Chen;Salter, Patrick S.;Wrachtrup, Joerg
碳化硅（SiC）中的单光子发射器作为量子光子系统正吸引人们的注意力（Awschalom等人，Nat. Photonics 2018，12，516-527; Atatiire等人，Nat. Rev. Mater. 2018，3，38-51）。然而，为了实现可扩展的设备，必须根据需要在所需位置生成单光子发射器。在这里，我们报告的控制创建的单硅空位（V-Si）中心的4 H-SiC使用激光写入没有任何postannealing过程。由于在写入设备和nonannealing过程中的像差校正，我们产生单V-Si中心的产量高达30%，位于约80 nm的所需的位置在横向平面内。我们还研究了激光写入V-Si心的量子物理，得出了大约有16个光子参与激光写入V-Si心的过程。我们的研究结果代表了一个强大的工具，在量子技术的SiC单V-Si中心的制造，并提供了进一步的见解激光写入缺陷的电介质材料。
Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems (Awschalom et al. Nat. Photonics 2018, 12, 516-527; Atatiire et al. Nat. Rev. Mater. 2018, 3, 38-51). However, to achieve scalable devices, it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy (V-Si) centers in 4H-SiC using laser writing without any postannealing process. Due to the aberration correction in the writing apparatus and the nonannealing process, we generate single V-Si centers with yields up to 30%, located within about 80 nm of the desired position in the transverse plane. We also investigated the photophysics of the laser writing V-Si centers and concluded that there are about 16 photons involved in the laser writing V-Si center process. Our results represent a powerful tool in the fabrication of single V-Si centers in SiC for quantum technologies and provide further insights into laser writing defects in dielectric materials.