On a Quasi-Variational Inequality Arising in Semiconductor Theory
On a Quasi-Variational Inequality Arising in Semiconductor Theory
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论半导体理论中出现的拟变分不等式
DOI：
10.5209/rev_rema.1992.v5.n1.17946
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
J. Rodrigues
中科院分区：
文献类型：
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作者：
J. Rodrigues
对确定反向偏置半导体二极管耗尽区的自由边界问题的一类拟变分不等式，得到了解的存在唯一性的一些新的数学结果.对二阶混合椭圆边值问题，用弱正则性估计的直接方法求解相应的一个（或两个）障碍隐式问题。
Sorne new mathematical resulís of existence and uniqueness of solutions are obtained for a class of quasi-variational inequahites modehling the free boundary problem for the determirsation of the depletion zone in reverse biased semiconductor diodes. Ihe corresponding one (or two) obstacle implicite problerns are solved by direct methods with weak regularity estimates for mixed boundary value elliptic problems of second order.