Research on metastable electron traps in the modified SOI materials induced by Si ion implantation
Research on metastable electron traps in the modified SOI materials induced by Si ion implantation
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DOI：
10.1116/1.2839858
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发表时间：
2008-02
期刊：
影响因子：
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通讯作者：
E. Zhang;Zhishui Yu;Yanggen Cao;Hui Yang;Zhengxuan Zhang;Xi Wang
中科院分区：
文献类型：
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作者：
E. Zhang;Zhishui Yu;Yanggen Cao;Hui Yang;Zhengxuan Zhang;Xi Wang
正如这封信中所报道的，绝缘体上硅 (SOI) 材料通过不同剂量的硅离子注入进行了改性。研究了电性能并研究了改性技术对 SOI 材料的影响。采用伪金属氧化物半导体（pseudo-MOS）方法获得的特性表明，随着Si离子注入剂量的变化，漏极ID电流与栅极电压VG（ID−VG）曲线沿VG轴移动。电子顺磁共振（EPR）、X射线光电子能谱（XPS）和电子测试结果表明，注入参数影响电性能，并且亚稳态电子陷阱被引入到SOI材料的埋氧层中。
Silicon-On-Insulator (SOI) materials were modified by Si ion implantation with different doses, as reported in this letter. The electrical performance was studied and the effect of a modification technique on the SOI materials was investigated. The characteristic, obtained by pseudo-metal-oxide-semiconductor (pseudo-MOS) method, showed that the drain ID current versus gate voltage VG(ID−VG) curves shifted along the axis of VG with the change of Si ion implantation doses. The results of electron paramagnetic resonance (EPR), x-ray photoelectron spectroscopy (XPS), and electronic test suggested that the parameters of implantation affect the electrical performance and that the metastable electron traps are introduced into the buried oxide layers of SOI materials.