Intrinsic delay of permeable base transistor
Intrinsic delay of permeable base transistor
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DOI：
10.1063/1.4891231
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发表时间：
2014-07-28
影响因子：
3.2
通讯作者：
Guo, Jing
中科院分区：
文献类型：
--
作者：
Chen, Wenchao;So, Franky;Guo, Jing
通过真空沉积或溶液工艺制造的导磁基极晶体管（PBT）具有易于制造和低功耗运行的优点，是一种有前途的柔性电子器件结构。采用有限元方法自洽求解三维泊松方程和漂移扩散方程，研究了表征晶体管速度的PBT固有延迟。减小发射极厚度可以通过提高导通电流来降低本征延迟，并且由于截止状态下基极区域中的载流子较少，因此更薄的基极对于低本征延迟也是优选的。随着发射极接触肖特基势垒高度的降低，本征延迟呈指数下降，并且与载流子迁移率线性相关。通过优化的发射极接触势垒高度和器件几何形状，可以在溶液处理的氧化铟镓锌中实现亚纳秒本征延迟，载流子迁移率接近 10 cm(2)/V/s，这表明溶液处理的 PBT 在 GHz 操作中的潜力。 (C) 2014 AIP 出版有限责任公司。
Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of similar to 10 cm(2)/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations. (C) 2014 AIP Publishing LLC.