Bismuth Aluminate : A New High-TC Lead-Free Piezo-/ferroelectric

Bismuth Aluminate : A New High-TC Lead-Free Piezo-/ferroelectric
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DOI:
10.1021/cm071830f
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发表时间:
2007-11
影响因子:
8.6
通讯作者:
J. Zylberberg;A. Belik;E. Takayama-Muromachi;Z. Ye
J. Zylberberg;A. Belik;E. Takayama-Muromachi;Z. Ye
中科院分区:
材料科学2区
文献类型:
--
作者:
J. Zylberberg;A. Belik;E. Takayama-Muromachi;Z. Ye

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铁电材料具有可逆的自发极化,当受到机械应力(压电性)时会产生电势,在非易失性随机存取存储器件和微型机电系统中有应用。对于这样的应用,需要在高温下保持铁电的材料。据预测,铝酸铋就是这样一种材料。本文首次对高压法制备的BiAlO_3陶瓷的介电、铁电和压电性能进行了表征。结果表明,BiAlO_3是一种居里温度为520℃,压电系数d33=28pC/N,室温剩余极化Pr=9.5μC/cm~2的无铅铁电材料。Pr随温度升高而增加,在225C时达到26.7cm2μC/cm2。
Ferroelectric materials, which have a reversible spontaneous polarization and generate an electric potential when subjected to a mechanical stress (piezoelectricity), have applications in nonvolatile random access memory devices and micro-electromechanical systems. For such applications, materials that remain ferroelectric up to high temperatures are desired. Bismuth aluminate has been predicted to be one such material. We present herein the first characterization of the dielectric, ferroelectric, and piezoelectric properties of the ceramic BiAlO3 synthesized by the high-pressure method. It is demonstrated that BiAlO3 is indeed a lead-free ferroelectric with a Curie temperature TC > 520 °C, a piezoelectric coefficient d33 = 28 pC/N, and a room-temperature remnant polarization Pr = 9.5 μC/cm2. Pr increases with temperature, reaching 26.7 μC/cm2 at 225 °C.