Simple surface-trap-filling model for photoluminescence blinking spanning entire CdSe quantum wires
Simple surface-trap-filling model for photoluminescence blinking spanning entire CdSe quantum wires
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DOI：
10.1021/jp710067b
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发表时间：
2008-04-03
影响因子：
3.7
通讯作者：
Loomis, Richard A.
中科院分区：
文献类型：
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作者：
Glennon, John J.;Buhro, William E.;Loomis, Richard A.
同步光致发光强度波动、闪烁、跨越整个微米长的CdSe量子线的机制(Glennon，J.J.；Tang，R.；Buhro，W.E.；Loomis，R.A.Nano Lett。2007，7,3290)可能与通常引用的半导体量子点不同。我们提出了一个简单的量子线强度闪烁模型，该模型基于光生激子对表面陷阱位的动态、瞬时填充和这些被占据的陷阱位的清空。该模型实现了动力学蒙特卡罗方案和动态光致发光量子产率，该量子产率依赖于陷阱位填充的比例。当大多数表面陷阱被填充时，形成了一维激子，从而获得了高的发射效率。实验和模拟的自相关分析揭示了控制闪烁现象的非遍历动力学。
The mechanism for synchronous photoluminescence intensity fluctuations, blinking, spanning entire micrometer-long CdSe quantum wires (Glennon, J. J.; Tang, R.; Buhro, W. E.; Loomis, R. A. Nano Lett. 2007, 7, 3290) is likely different than that commonly cited for semiconductor quantum dots. We present a simple model for the intensity blinking in quantum wires that is based on the dynamic, transient filling of surface-trap sites by photogenerated excitons and the emptying of these occupied trap sites. The model implements a kinetic Monte Carlo scheme and a dynamic photoluminescence quantum yield that depends on the fraction of trap sites filled. When A majority of the surface traps are filled, one-dimensional excitons are formed and a high emission efficiency. Autocorrelation analysis of both experiment and simulation reveal the nonergodic kinetics governing the blinking phenomenon.