Growth of SiC nanorods prepared by carbon nanotubes-confined reaction
Growth of SiC nanorods prepared by carbon nanotubes-confined reaction
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DOI：
10.1016/s0022-0248(99)00737-x
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发表时间：
2000-03-01
影响因子：
1.8
通讯作者：
Gu, Q
中科院分区：
文献类型：
--
作者：
Tang, CC;Fan, SS;Gu, Q
利用SiO气体与碳纳米管之间的碳纳米管限制反应合成了SiC纳米棒。SiC纳米棒的直径可以通过反应过程中产生的CO气体的局部分压来控制。SiC纳米棒的形貌取决于碳纳米管在高温下的形状。SiC纳米棒的生长机制基本上是形状记忆合成。(C)2000 Elsevier Science B.V.保留所有权利。
SiC nanorods have been synthesized by means of the carbon nanotubes-confined reaction between SiO gas and carbon nanotubes. The diameters of SiC nanorods can be controlled by the local partial pressure of the CO gas produced during reaction. The morphology of SiC nanorods depends on the shape of the carbon nanotubes at high reaction temperatures. The growth mechanism of SIC nanorods is basically a shape memory synthesis. (C) 2000 Elsevier Science B.V. All rights reserved.