Effects of the crystallographic orientation of Sn on the electromigration of Cu/Sn-Ag-Cu/Cu ball joints
Effects of the crystallographic orientation of Sn on the electromigration of Cu/Sn-Ag-Cu/Cu ball joints
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DOI：
10.1557/jmr.2010.86
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发表时间：
2011-02-01
影响因子：
2.7
通讯作者：
Ueshima, Minoru
中科院分区：
文献类型：
--
作者：
Lee, Kiju;Kim, Keun-Soo;Ueshima, Minoru
电迁移行为和快速电路故障相对于Sn晶粒的晶体取向进行了研究。试验载体为Cu/Sn-3.0重量% Ag-0.5重量% Cu/Cu球接头，并且在160 ℃下施加的电流密度为15 kA/cm（2）。实验结果表明，大多数的焊料凸点显示不同的微观结构的变化相对于Sn晶粒的晶体取向。当c轴平行于电子流时，Cu原子沿Sn晶粒c轴沿着快速间隙扩散，导致阴极侧Cu电路溶解，从而导致凸块快速失效。当c轴垂直于电子流时，观察到轻微的微观结构变化。此外，Cu 6Sn 5金属间化合物（IMC）形成沿着的Sn晶粒的c轴的方向，而不是在所有的焊料球接头的电子流动的方向。
Electromigration behavior and fast circuit failure with respect to crystallographic orientation of Sn grains were examined. The test vehicle was Cu/Sn-3.0 wt% Ag-0.5 wt% Cu/Cu ball joints, and the applied current density was 15 kA/cm(2) at 160 degrees C. The experimental results indicate that most of the solder bumps show different microstructural changes with respect to the crystallographic orientation of Sn grains. Fast failure of the bump occurred due to the dissolution of the Cu circuit on the cathode side caused by the fast interstitial diffusion of Cu atoms along the c-axis of the Sn grains when the c-axis was parallel to the electron flow. Slight microstructural changes were observed when the c-axis was perpendicular to the electron flow. In addition, Cu6Sn5 intermetallic compound (IMC) was formed along the direction of the c-axis of the Sn grains instead of the direction of electron flow in all solder ball joints.