n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
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DOI：
10.1143/jjap.38.l1519
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发表时间：
1999-12
影响因子：
1.5
通讯作者：
M. Hasegawa;D. Takeuchi;S. Yamanaka;M. Ogura;H. Watanabe;N. Kobayashi;H. Okushi;K. Kajimura
中科院分区：
文献类型：
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作者：
M. Hasegawa;D. Takeuchi;S. Yamanaka;M. Ogura;H. Watanabe;N. Kobayashi;H. Okushi;K. Kajimura
首次在化学气相沉积（CVD）法生长的同质外延金刚石（100）膜中通过硫离子注入实现了n型控制。在400°C下以高达400 keV的能量进行硫注入。电导率的激活能为0.19-0.33 eV，取决于离子注入的条件。通过在CVD期间结合硫注入和气相硼掺杂来制造该层与硼掺杂p型层之间的结。该结具有明显的pn结特性。结的电容随反向偏置电压的增加而减小，证实了结的耗尽区实际上随反向偏置电压的增加而扩展。
n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400°C. The activation energy of the conductivity was 0.19–0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.