Development of Highly Accurate Simulation Model of Wafer Behavior Considering Contact Between Wafer and Carrier during Double-Sided Lapping
Development of Highly Accurate Simulation Model of Wafer Behavior Considering Contact Between Wafer and Carrier during Double-Sided Lapping
复制标题
开发高精度晶圆行为仿真模型，考虑双面研磨过程中晶圆与载体之间的接触
DOI：
10.2493/jjspe.83.433
复制
发表时间：
2017
影响因子：
--
通讯作者：
A. Hosokawa
中科院分区：
文献类型：
--
作者：
Y. Hashimoto;R. Kondo;T. Furumoto;A. Hosokawa
