In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition
In Situ S-Doping of Cubic Boron Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition
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DOI：
10.4028/www.scientific.net/msf.638-642.2956
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发表时间：
2010-01
期刊：
影响因子：
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通讯作者：
Hangsheng Yang;N. Kurebayashi;T. Yoshida
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文献类型：
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作者：
Hangsheng Yang;N. Kurebayashi;T. Yoshida
在等离子体增强化学气相沉积系统中，通过添加硫化氢，研究了立方氮化硼（cBN）薄膜的原位硫掺杂。结果表明，cBN的成核过程在极低的H_2S浓度下受到严重抑制，而cBN在成核后，即使H_2S浓度与硼源浓度一样高，也能连续生长。相应地，S被并入到cBN膜中，同时保持立方相浓度高达95%。在室温下，在p型硅衬底上沉积掺S的cBN薄膜制备的异质结二极管的整流比约为10 5，这表明了类n型掺杂的可能性。此外，1500K后在H2气氛中退火的cBN薄膜被发现可以明显地释放残余压应力。因此，膜粘附强度显著增加，并且cBN膜在9个月后在空气中达到超过200 nm的厚度而不从硅和石英衬底剥离。
In situ sulphur doping of cubic boron nitride (cBN) films was investigated by adding H2S into a plasma-enhanced chemical vapor deposition system. It was found that the nucleation of cBN was suppressed severely with a very low H2S concentration, while cBN could be grown continuously even at a H2S concentration as high as that of the boron source after its nucleation. Accordingly, S was incorporated into cBN films meanwhile keeping the cubic phase concentration as high as 95%. And a rectification ratio of approximately 10 5 was observed at room temperature for heterojunction diodes prepared by depositing S-doped cBN films on p-type silicon substrates, which suggests the possibility of an n-type-like doping. Moreover, 1500K post annealing of cBN films in H2 atmosphere was found to be able to release the residual compressive stress evidently. Thus, film adhesion strength increased markedly, and cBN films reached a thickness over 200 nm without peeling off from silicon and quartz substrates in air after 9 months.