AlGaN/GaN current aperture vertical electron transistors
AlGaN/GaN current aperture vertical electron transistors
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AlGaN/GaN电流孔径垂直电子晶体管
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
U. Mishra
中科院分区：
文献类型：
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作者：
I. Ben;Yee;S. Heikman;S. Denbaars;U. Mishra
描述了AlGaN/GaN电流孔垂直电子晶体管（CAVET）结构。CAVET由通过绝缘层与漏极区分离的源极区组成，所述绝缘层包含填充有导电材料的窄孔。通过反应离子蚀刻形成器件台面，并且在孔的任一侧上沉积源极接触。漏极金属接触孔下方的n掺杂区。电子从源极接触通过孔流入n型基极区并在漏极处被收集。肖特基栅极位于孔的正上方，用于调制通过孔的电流。在CAVET中，因为虚拟漏极（或夹断区域）位于栅极下方，所以电荷不会在栅极边缘处累积，因此在栅极边缘附近不存在大的场。相反，我们的模拟表明，在CAVET的高场区是埋在散装。CAVET因此具有支持大的源极-漏极电压的潜力，因为消除了与表面相关的击穿。
Describes AlGaN/GaN current aperture vertical electron transistor (CAVET) structures. A CAVET consists of a source region separated from a drain region by an insulating layer containing a narrow aperture which is filled with conducting material. A device mesa is formed by reactive ion etching, and source contacts are deposited on either side of the aperture. The drain metal contacts the n-doped region below the aperture. Electrons flow from the source contacts through the aperture into the n-type base region and are collected at the drain. A Schottky gate, located directly above the aperture, is used to modulate the current passing through the aperture. In a CAVET, because the virtual drain (or pinched off region) is located underneath the gate, charge does not accumulate at the gate edge, so no large fields near the gate edge are present. Instead, our simulations show that the high field region in a CAVET is buried in the bulk. The CAVET therefore has the potential to support large source-drain voltages, since surface related breakdown is eliminated.