Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
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DOI：
10.1109/55.400735
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发表时间：
1995-08
影响因子：
4.9
通讯作者：
J. Babcock;J. Cressler;L. Vempati;S. Clark;R. Jaeger;D. Harame
中科院分区：
文献类型：
--
作者：
J. Babcock;J. Cressler;L. Vempati;S. Clark;R. Jaeger;D. Harame
本文首次报道了电离辐射对高级特高压/CVD SiGe HBT电学特性和1/f噪声特性的影响。在总辐射剂量为2.0 Mrad（Si）的γ辐射照射下，SiGe HBT和Si BJT的电流-电压特性都只有轻微的退化。观察到的对电离辐射暴露的免疫表明，这些SiGe HBT非常适合许多需要辐射耐受的应用。我们还观察到在一些SiGe HBT中出现电离辐射诱导的产生-复合（G/R）噪声
The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported for the first time. Only minor degradation in the current-voltage characteristics of both SiGe HBT's and Si BJT's is observed after total radiation dose exposure of 2.0 Mrad(Si) of gamma-radiation. The observed immunity to ionizing radiation exposure suggests that these SiGe HBT's are well suited for many applications requiring radiation tolerance. We have also observed the appearance of ionizing-radiation-induced generation-recombination (G/R) noise in some of these SiGe HBT's.>