High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology
High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology
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采用 SIMOX 技术制造的绝缘体上 SiGe 衬底上的高性能应变 Si p-MOSFET
DOI：
10.1109/iedm.1999.824303
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
A. Toriumi
中科院分区：
文献类型：
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作者：
T. Mizuno;Shinichi Takagi;Naoharu Sugiyama;Junji Koga;T. Tezuka;Koji Usuda;Tetsuo Hatakeyama;Atsushi Kurobe;A. Toriumi
我们提出了一种新的 MOSFET 结构，即适用于 100 nm 以下一代的应变 Si/Si/sub 0.9/Ge/sub 0.1/绝缘体上 (SSGOI) MOSFET。这种SSGOI结构是通过SIMOX技术和Si再生长技术的结合成功制造的。 SSGOI 中的应变硅具有良好的晶体质量和非常平坦的界面。 SSGOI p-MOSFET 表现出良好的 FET 特性。首次证明 SSGOI p-MOSFET 的空穴迁移率高于传统 Si p-MOSFET 的通用迁移率。
We have proposed a new MOSFET structure, strained-Si/Si/sub 0.9/Ge/sub 0.1/-on-Insulator (SSGOI) MOSFETs applicable to the sub-100 nm generation. This SSGOI structure was successfully fabricated by the combination of SIMOX technology and the Si re-growth technique. The strained-Si in SSGOI was found to have good crystal quality and very flat interfaces. SSGOI p-MOSFETs exhibited good FET characteristics. It was demonstrated, for the first time, that the hole mobility of the SSGOI p-MOSFETs is higher that of the universal mobility of conventional Si p-MOSFETs.