Silicon-on-Glass Dielectric Waveguide-Part II: For THz Applications
Silicon-on-Glass Dielectric Waveguide-Part II: For THz Applications
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DOI：
10.1109/tthz.2015.2397279
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发表时间：
2015-03-01
影响因子：
3.2
通讯作者：
Safavi-Naeini, Safieddin
中科院分区：
文献类型：
--
作者：
Ranjkesh, Nazy;Basha, Mohamed;Safavi-Naeini, Safieddin
提出了一种低损耗的亚毫米波/太赫兹集成介质波导。所提出的波导由一个高阻硅（Si）的引导通道结合到玻璃基板。为了减小由于玻璃衬底引起的波导插入损耗，蚀刻Si引导通道下方的部分衬底。支撑梁的周期性配置用于将Si引导通道保持在玻璃衬底上方。一个低成本和高精度的制造工艺，这是完全兼容当前的硅基制造技术，开发拟议的波导。数值模拟和实验进行了研究所提出的波导的性能。在440-500 GHz频段内，该波导的实测衰减常数为0.0346 dB/（平均值）。
A low-loss sub-millimeter-wave/THz integrated dielectric waveguide is presented. The proposed waveguide consists of a highly resistive Silicon (Si) guiding channel bonded to a glass substrate. To reduce the waveguide insertion loss due to the glass substrate, part of the substrate below the Si guiding channel is etched. A periodic configuration of supporting beams is used to hold the Si guiding channel over the glass substrate. A low-cost and high-precision fabrication process, which is fully compatible with current Si-based fabrication technologies, is developed for the proposed waveguide. Numerical simulations and experiments are conducted to investigate the performance of the proposed waveguide. Measured attenuation constant of the proposed waveguide is 0.0346 dB/(average value) over the 440-500 GHz band.