Low-voltage high-speed coupling modulation in silicon racetrack ring resonators.
Low-voltage high-speed coupling modulation in silicon racetrack ring resonators.
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DOI：
10.1364/oe.23.028993
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发表时间：
2015-11
期刊：
影响因子：
3.8
通讯作者：
Rui Yang;Linjie Zhou;Haike Zhu;Jianping Chen
中科院分区：
文献类型：
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作者：
Rui Yang;Linjie Zhou;Haike Zhu;Jianping Chen
我们展示了一种基于可调谐马赫-曾德尔干涉仪耦合器的硅径迹谐振器的低压高速调制器。进行了静态测量和动态调制实验。由腔光子寿命测得，3分贝电光带宽超过了极限30 GHz。在峰峰值电压为0.4V的情况下，实现了32 Gb/S的开关键控调制；在驱动电压为3V的情况下，实现了28 Gb/S的二进制相移键控调制。
We demonstrate a low-voltage high-speed modulator based on a silicon racetrack resonator with a tunable Mach-Zehnder interferometer coupler. Both static measurement and dynamic modulation experiment are carried out. The 3-dB electro-optic bandwidth is measured to be >30 GHz beyond the limit by the cavity photon lifetime. A 32 Gb/s on-off keying (OOK) modulation is realized under a peak-to-peak drive voltage as low as 0.4 V, and a 28 Gb/s binary phase-shift-keying (BPSK) modulation is realized with a drive voltage of 3 V. The low drive voltages results in low energy consumptions of ~13.3 fJ/bit and ~1.2 pJ/bit for OOK and BPSK modulations, respectively.