Presidential Young Investigator Award: Investigation of Tunneling Structures in GaAs/GaAIAs

量子力学隧道效应在半导体器件中一直是一种有趣的现象，尽管这种效应在器件应用中的实际应用有限。近年来，随着分子束外延技术对晶体界面的高度完善和高精度生长，人们可以制造出新的、新颖的隧道结构。这项研究的目标是表征和优化隧道结构中的电子输运。将根据需要开发分子束外延技术，以优化这种传输。将对可用作高速或光电设备的新型几何结构进行研究。

Quantum mechanical tunneling has always been an interesting phenomenon in semiconductor devices, although the practical utilization of this effect in device applications is limited. Recently with the high degree of crystal interface perfection and the precision growth possible with MBE technology, new and novel tunneling structures can be fabricated. The goal of this research is to characterize and optimize electron transport in tunneling structures. MBE technology will be developed as necessary to optimize this transport. Investigation of novel geometries that could be used as either high speed or opto electric devices will be performed.