Presidential Young Investigator Award: Piezoelectric Voltage Shifts in GaAs MESFET and GE Phototransitor Technologies

在固态器件和电路领域的几个项目将进行。研究了外延生长的晶格错配半导体薄层的基本物理和工程应用，其中错配以弹性应变而不是错配位错（伪晶层）来调节。应用包括高速数字和微波器件以及集成光电子学。基本物理和工程应用的锗/绝缘体系统（特别是Ge/Ge N）进行了检查。应用包括锗和锗“mosfet”的钝化光电子应用和高性能CMOS电路。重点是设计和实现高速，低成本的单片锗光纤接收器/放大器电路，用于长波长（1.3um或1.55um）光通信系统。

Several projects in the areas of solid state devices and circuits will be conducted. Fundamental physics and engineering applications of epitaxially grown thin layers of lattice mismatched semiconductors in which the mismatch is accommodated as elastic strain rather than by misfit dislocations (pseudomorphic layers) are studied. Applications include high speed digital and microwave devices and integrated optoelectronics. Fundamental physics and engineering applications of germanium/insulator systems (especially Ge/Ge N) are examined. Applications include passivation of germanium and germanium "MOSFETs" for optoelectronic applications and high performance CMOS circuits. Attention is focused on the design and implementation of high-speed, low-cost monolithic germanium fiber-optic receiver/amplifier circuits for long wavelength (1.3um or 1.55um) optical communications systems.