Semiconductor Doped Glasses for Nonlinear Integrated Optics

尽管光功率密度的固有增加， 导波，实际的非线性导波装置还没有被 由于缺乏合适的材料， 研究人员 正在研究一种很有前途的候选材料半导体 掺杂玻璃，最近已被证明具有大的非线性 从光诱导等离子体产生，并与潜在的皮秒 激发和恢复时间。 的兴衰时间 非线性正在研究实验使用退化 用亚皮秒激光源进行四波混频。 可商 正在研究的可用材料包括小的半导体 玻璃基质中的微晶。 沉积技术也正在被 开发用于制造半导体复合膜。 制造 薄膜复合电容器-介电材料的范围 物质的使用应扩大器械可能性的范围 可实现的目标，并加强对负责 这些材料在线性和 非线性区域 非线性通道器件将成为 通过在市售玻璃中使用离子交换制备， 光刻技术以在沉积的衬底上形成所需的图案。 半导体薄膜

Despite the inherent increase in optical power density available with guided waves, practical nonlinear guided wave devices have not been forthcoming due to the lack of appropriate materials. The researchers are investigating a candidate material of great promise, semiconductor doped glass, which has recently been shown to have large nonlinearities from optically induced plasma creation, and with potentially picosecond excitation and recovery times. The rise and fall times of the nonlinearity are being investigated experimentally using degenerate four-wave mixing with a sub-picosecond laser source. The commercially available materials being investigated consist of small semiconductor crystallites in a glass matrix. Deposition techniques are also being developed to fabricate semiconductor composite films. The fabrication of thin-film composite semiconductor-dielectric materials from a range of substances should broaden the range of device possibilities achievable, and enhance understanding of the mechanism responsible for the optical behavior of these materials in both the linear and nonlinear regimes. Nonlinear channel devices are going to be fabricated by using ion exchange in commercially available glasses by lithographic techniques to form the required patterns in the deposited semiconductor films.