Studies of Faraday Rotation in n-cadmium Selenide

与S合作。AT T贝尔实验室的Geschwind， 磁性能将通过测量法拉第 镉硒，一种直接带隙半导体， 施主浓度跨越金属-绝缘体 过渡 测量将首先在AT T贝尔进行 实验室下降到1.2开尔文，然后扩展到20 millikelvin， 在城市学院的稀释冰箱中的磁场， 磁铁，计划于1988年交付。 的目的 这些实验是为了了解附近的磁性行为 金属-绝缘体过渡，特别强调 磁化率的温度依赖性很强， 被观察到的只是金属样品，并已被 不同地归因于电子相关性和/或存在 在过渡金属一侧的磁矩。

In collaboration with S. Geschwind of AT&T Bell Laboratories, magnetic properties will be investigated by measuring the Faraday rotation of Cadmium-Selenium, a direct band-gap semiconductor, with donor concentrations spanning the metal-insulator transition. Measurements will first be carried out at AT&T Bell Labs down to 1.2 Kelvin, and then extended to 20 millikelvin in magnetic fields at City College in a dilution refrigerator and magnet which are scheduled for delivery in 1988. The aim of these experiments is to understand the magnetic behavior near the metal-insulator transition, with particular emphasis on the strong temperature dependence of the susceptibility which has been observed for just-metallic samples, and which has been variously ascribed to electron correlations and/or the presence of magnetic moments on the metallic side of the transition.