Research Initiation: Transient Heat Transfer and Thermal Stresses in Rapid Annealing of Semiconductors with Incoherent Light

本文研究了非相干光离子注入硅片的快速热退火问题。热模拟瞬态传热和热活化退火过程的热弹性应力将被执行。分析模型考虑了二维贡献、固相外延引起的非晶界面移动边界以及光学和热物理性质的变化。将开发一个有限差分数值程序来求解数学模型。计算机辅助分析将把应用范围扩大到更具体、更复杂的系统。实验研究也将解决退火过程。这些数据将有助于验证和改进分析模型和数值模型。快速热退火技术是一项与集成电路晶圆制造和超大规模集成电路应用相关的新兴技术。提出的研究将为离子注入半导体在非相干光快速热退火过程中提供系统的热分析。研究结果有助于加深对热活化过程中传热机理和热应力的认识。这项研究的成功可以导致高质量的半导体生产的能源效率和高重复性的方法。

This research considers the rapid thermal annealing of ion- implanted silicon wafers with incoherent light. Thermal modeling of the transient heat transfer and the thermoelastic stresses of the thermally activated annealing processes will be performed. The analytical modeling considers the two-dimensional contributions, the moving boundary at the amorphous-crystalline interface due to the solid phase epitaxy, and the variations of the optical and thermal physical properties. A finite-difference numerical program will be developed to solve the mathematical model. The computer-aided analysis will broaden the applications to more specific and complex systems. An experimental investigation will also address the annealing process. The data will be useful for the validation and improvement of analytical and numerical models. Rapid thermal annealing is a new and promising technology related to IC wafer fabrication the VLSI applications in the semiconductor industry. The proposed research will provide a systematic thermal analysis for ion-implanted semiconductors during rapid thermal annealing processes by incoherent light. The results may improve the understanding of the heat transfer mechanism and the thermal stresses induced during the thermally activated processes. The success of this research can lead to high quality semiconductors produced in an energy efficient method with high reproducibility.