Modeling of Chemical Reactive Flows in a Chemical Vapor Deposition Reactor with Complex Geometry

化学气相分解（CVD）是制备半导体和化合物半导体材料的重要技术之一，在高速电子和超级计算机技术中起着至关重要的作用。桶式反应器是一种在常压或减压下运行的商用CVD反应器。不幸的是，薄膜沉积的均匀性在这个反应器中是一个真正的问题。流型是三维不对称的。这项拟议工作的目标如下。第一种是利用计算流体力学中最先进的有限元技术来求解筒状反应器中复杂的反应流动。不同的有限元方法导致不同的一致质量矩阵。目标是找到一种算法，该算法提供具有最小数值扩散和杂散振荡的“最优”一致质量矩阵。所开发的算法将用于研究气体流速、喷管转速、喷嘴位置、衬底温度和操作压力对现有反应器沉积速率和均匀性的影响。它也可以作为新的气体分配系统和反应器设计的设计工具。

Chemical vapor decomposition (CVD) is one of the important techniques in the fabrication of semiconductor and compound semiconductor materials which are crucial in high speed electronics and supercomputer technology. Barrel reactor is a commercial CVD reactor operating at atmospheric pressure or reduced pressure. Unfortunately, uniformity in film deposition is a real concern in this reactor. The flow patterns are three dimensional asymmetric. The objectives of this proposed work are as follows. The first is to use state-of-the-art finite element techniques in computational fluid dynamics to solve for the complex reactive flows in a barrel reactor. Different finite element methods lead to different consistent mass matrices. The goal is to find an algorithm which provides an "optimal" consistent mass matrix with minimum numerical diffusion and spurious oscillation. The developed algorithm will be used to study the effects of gas flow rates, suspector rotating speed, gas nozzle locations, substrate temperature and operating pressure on the deposition rate and uniformity of existing reactors. It can also be used as a design tool for new gas distribution system and reactor design.