Presidential Young Investigator Award

魏博士被选为总统青年研究员。活跃于III-V类化合物半导体材料科学基础研究。在国家科学基金的研究项目中，他将继续研究III-V异质结材料的生长，半导体的百万电子伏特离子束处理和薄膜氧化物超导材料。研究中使用的技术包括拉曼光谱、声子频移技术、电学表征、x射线衍射、霍尔光谱、深能级阱光谱和有机金属气相沉积。这项资助的研究将对半导体和超导材料技术的加工和表征产生影响。与工业界的互动，这是固有的总统青年研究员资助将影响国家竞争力在电子领域。

Dr. Wie has been selected as a Presidential Young Investigator. He is active in fundamental research on materials science of III-V compound semiconductors. In the research program for he National Science Foundation he will pursue studies to include the growth of III-V heterojunction materials, million electron volt ion beam processing of semiconductors, and thin film oxide superconducting materials. Techniques utilized in the research include Raman spectroscopy, phonon frequency shift techniques, electrical characterization, x-ray diffraction, Hall spectroscopy, deep level trap spectroscopy, and organometallic vapor deposition. The research in this grant will have impact on the processing and characterization of semiconducting and superconducting materials technology. The interactions with industry which are inherent with Presidential Young Investigator grants will have implications for national competitiveness in the electronics field.