Monolithic Optical Data Transmitters

本提案描述了一个为期六个月的计划，以解决半导体激光二极管及其相关驱动/调制晶体管的单片集成的商业生产过程的可行性。这项工作的主动性源于一个确定的市场。Pacific Monolithics告诉NESI，如果有的话，他们将大量购买这种类型的产品。该激光器将是渐变索引分离约束异质结构单量子阱（GRINCSH-SQW）类型，该类型已生产出迄今为止性能最高的半导体激光器。晶体管结构将是应变沟道、调制掺杂场效应晶体管（MODFET）型。这种类型的MODFET已经生产出了世界上最快的晶体管。AlGaAs量子阱激光器和晶体管结构将通过分子束外延（MBE）生长，并在第二阶段转移到有机金属气相外延（OMVPE）进行批量生产（降低成本）。这些单独的设备和材料，以及生长和制造技术已经在康奈尔大学进行了演示。该计划的第一阶段将扩展这些知识，包括集成技术。这是对未来可制造性有信心的必要条件。激光波长为850nm，适用于塑料或多模玻璃光纤（局部区域）的短距离光信号传输。在未来，这项技术将导致光网络。

This proposal describes a six month program to address the feasibility of commercial production processes for monolithic integration of a semiconductor laser diode and its associated driving/modulating transistor. The initiative for this work stems from an identified market. Pacific Monolithics has told NESI that they would purchase large quantities of this type of product if available. The laser will be of the Graded Index Separate Confining Heterostructure Single Quantum Well (GRINCSH-SQW) type which has produced the highest performance semiconductor lasers to date. The transistor structure will be the strained channel, Modulation Doped Field Effect Transistor (MODFET) type. This type MODFET has produced the world's fastest transistor for the proposed geometry. The AlGaAs quantum well laser and transistor structure will be grown by Molecular Beam Epitaxy (MBE) and transferred in Phase II to Organometallic Vapor Phase Epitaxy (OMVPE) for mass production (cost reduction). These individual devices and materials, as well as the growth and fabrication technologies have been demonstrated at Cornell University. Phase I of this program would extend this knowledge to include the integration technology. This is a necessary condition for confidence in future manufacturability. The lasing wavelength will be = 850 nm, suitable for short haul plastic or multimode glass fibers (local area) optical signal transmission. In the future this technology would lead on to optical networking.