Presidential Young Investigator Award: Quantitative Measurement of Point Defects Introduced by Phosphorus Implantation into Silicon

该PYI奖将用于离子注入诱导非晶化以及化合物半导体和异质化合物半导体界面的固相外延生长的新领域的研究。在GaAs固相外延过程中，固体扩散限制导致了更大规模生长锋的不稳定性和小规模（10- 15A）离散聚集型生长。这些固相生长特性代表了与元素半导体固相外延生长相关的二维Frank van der Merwe型生长的背离。采用全新的JEOL 4000FX高分辨率pi将TEM进行全图像处理，逐层原位研究固相外延生长过程。

This PYI award will be used to pursue research into the novel area of ion implantation induced amorphization and subsequent solid phase epitaxial growth of compound semiconductors and heterocompositional compound semiconductor interfaces. Solid state diffusion limitations account for observation of both the larger scale growth front instabilities and the small scale (10- 15A) discrete aggregative type growth during solid phase epitaxy of GaAs. These solid phase growth characteristics represent a departure from the two dimensional Frank van der Merwe type growth associated with solid phase epitaxial growth of elemental semiconductors. With a new JEOL 4000FX high resolution the P.I. will TEM with full image processing, study the layer by layer solid phase epitaxial growth process in situ.