(A1,Ga)Sb Alloys and GaSb/A1Sb Multiple Quantum Wells for Infrared Optoelectronic Device Applications

在这个项目中，将研究基于AlGaSb材料系统的各种器件在光源和探测器方面的应用。基于MSM(金属-半导体-金属)、PIN、SAGM(分离吸收梯度和倍增)等结构的各种(Al，Ga)Sb光电探测器结构将被制备和表征。在这方面，初步结果非常令人鼓舞。已经获得了没有表面钝化的分子束外延(MBE)生长的PIN二极管的记录击穿电压(6V)，预计通过推行更全面的计划，将取得重大进展。除了探测器之外，将研究GaSb/AlSb量子井光调制器和量子井激光器，以及PIN和MSM探测器与n沟道场效应管和p沟道场效应管的集成ALSB/INAS/GASB。通过反射高能电子衍射(RHEED)和俄歇电子能谱(俄歇电子能谱)确定了材料生长的最佳分子束外延条件。用X射线衍射仪对材料的结构性能进行表征。其电学和光学性质将通过霍尔测量和光致发光来表征。最后，将制作和表征GaSB MSM、PIN、雪崩和SAGM光电探测器。

In this program various devices based on the AlGaSb material system for optical source and detector applications will be studied. Various (Al,Ga)Sb based on photodetectors structures including MSM (metal-semiconductor-metal), PIN, SAGM (Separate absorption graded and multiplication), etc., will be fabricated and characterized. In this area preliminary results have been very encouraging. Record breakdown voltages (6V) for molecular beam epitaxial (MBE) grown PIN diodes without surface passivation have already been obtained, and it is expected that significant progress will be made by pursuing a more comprehensive program. In addition to detectors, GaSb/AlSb quantum well optical modulators and quantum well lasers will be studied along with the integration of PIN and MSM detectors with the n- and p-channel FETs based on AlSb/InAs/GaSb. The optimal MBE conditions for the material growth will be established through reflection high energy electron diffraction (RHEED) and Auger electron spectroscopy. The structural properties of the materials will be characterized by x-ray diffraction. The electrical and optical properties will be characterized Hall measurements and photoluminescence. Finally, GaSb MSM, PIN, avalanche and SAGM photodetectors will be fabricated and characterized.