Development of Quantifiable Heat Transport Control for Crystal Growth and Segregation in Ezochralski Geometry: Doped Germanium

小行星9221156 半导体块体晶体生长存在理论与实验之间的差距，这在很大程度上归因于无法获得可量化的热边界条件。针对这一不足，提出了一种基于热管的直拉法半导体晶体生长传热控制系统的设计、构建、表征和测试。 该系统将涉及一个三部分热管组件与钠作为传热流体。 可控制和可量化的轴对称热边界条件的建立将通过热电偶阵列的温度测量和热成像来确定。 它的功能是要测试的Ga掺杂的锗在晶体直径高达2厘米的增长。主要边界条件和晶体生长行为之间的关系将通过定量偏析分析来确定。 这些分析是有可能的，在生长过程中引入电流控制的晶体熔体界面划界（通过蚀刻和相差显微镜对轴向晶体样品显示）和定量组成测定的基础上扩展电阻测量。 %半导体晶体生长是固态器件技术的基础，主要是在经验基础上进行的，所得材料达不到理论性能极限。本文的研究将有助于缩小理论与实验之间的差距。 它将提供一种方法，用于增加对半导体中与生长相关的缺陷形成的控制，并有望为更有效地使用数学建模来实现特定的生长控制目标奠定基础。 ***

9221156 Witt Semiconductor bulk crystal growth suffers from a gap between theory and experiment which is to a large extent attributable to the non-availability of quantifiable thermal boundary conditions. With focus on this deficiency it is proposed to design, construct, characterize and test a heat- pipe-based heat transfer control system for semiconductor crystal growth by the Czochralski technique. The system will involve a three part heat pipe assembly with sodium as heat transfer fluid. The establishment of controllable and quantifiable axi-symmetric thermal boundary conditions is to be ascertained through temperature measurements with a thermocouple array and on the basis of thermal imaging. Its functionality is to be tested in growth of Ga doped germanium at crystal diameters of up to 2 cm. The relationship between the prevailing boundary conditions and the crystal growth behavior is to be determined through quantitative segregation analyses. These analyses are made possible with the introduction during growth of current controlled crystal melt interface demarcation (revealed by etching and phase contrast microscopy on axial crystal samples) and quantitative composition determination based on spreading resistance measurements. %%% Semiconductor crystal growth, the basis for solid state device technology, is conducted on a largely empirical basis and the resulting materials fall short of theoretical performance limits. The proposed research is expected to contribute to narrowing the gap between theory and experiment. It will provide a means for increased control over growth related defect formation in semiconductors and is expected to establish a basis for more effective use of mathematical modeling to achieve specific growth control objectives. ***