Synchrotron Radiation Investigation of Electronic, Structural and Catalytic Properties of Alkali Metal-Covered Materials

该项目是一项研究计划的延续， 通过碱金属覆盖层对固体表面进行改性。 的 努力的重点是调查表面的电子促进 化学反应和对电子和原子的修饰 几种重要的半导体和金属的结构 覆盖层和催化氧化和氮化 半导体 本课题是以光电子技术为基础， 光谱学使用的软X射线光谱提供的高 同步辐射亮度1GeV电子储存环 威斯康星大学麦迪逊分校的中心。 除了有 电子性质，原子结构的信息 研究的接口是通过使用相对 光电子扩展x射线吸收精细化新技术 结构 %%% 金属的原子和电子结构知识 半导体和半导体/氧化物界面对于 对这些系统的基本理解，以及 当前和未来电子设备的最佳性能。 这 该项目涵盖了几种实验光谱技术， 在1 GeV同步辐射下的现有国家资源 中心，在威斯康星大学麦迪逊分校。 这项工作将 提供有关电子结构、原子 几何形状，以及重要催化剂的微观机制 反应如半导体的氧化或氮化， 正在调查的金属表面。 这项研究对应用和 金属/半导体界面的技术领域是 最近的两项美国专利表明。

This project is a continuation of a research program to study the modification of solid surfaces by alkali metal overlayers. The effort focuses on investigating the electronic promotion of surface reactions and on the modification of the electronic and atomic structure of several important semiconductors and metals by alkali overlayers and the catalytic oxidation and nitridation of semiconductors. The project is based on technique of photoelectron spectroscopy using the soft x-ray spectrum provided by the high brilliance 1 GeV electron storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. In addition to the electronic properties, information on the atomic structure of investigated interfaces is provided by the use of the relatively new technique of photoemission extended x-ray absorption fine structure. %%% Knowledge of the atomic and electronic structure of metal semiconductor and semiconductor/oxide interfaces is essential to the basic understanding of these systems, as well as for the optimum performance of current and future electronic devices. This project coveres several experimental spectroscopic techniques using existing national resources at the 1 GeV Synchrotron Radiation Center, at the University of Wisconsin-Madison. The work will provide valuable information on the electronic structure, atomic geometry, and the microscopic mechanisms of important catalytic reactions like oxidation or nitridation of the semiconductor and metal surfaces under investigation. The potential impact of this research on the applied and technological areas of metal/semiconductor interfaces is indicated by two recent U.S. patents.