Presidential Faculty Fellow Award: A Multidisciplinary Approach to IC Process Modeling Using the SUPREM-IV ModelingTool

这个多学科研究的重点是硅模型的点缺陷行为的发展，这是理解掺杂物扩散的关键。硅化和应力对点缺陷动力学影响的模型正在开发和参数化。然后在SUPREM-IV中实现这些模型，这是一种利用先进有限元技术的标准集成电路过程建模工具。这是一个总统学院研究员（PFF）奖，最初在1992财政年度颁发。

Law This multidisciplinary research focuses on the development of silicon models for point defect behavior, which are vital to understanding dopant diffusion. Models are being developed and parameterized for the effect of silicidation and stress on point defect kinetics. These models are then implemented in SUPREM-IV, a standard integrated circuit process modeling tool that utilizes advanced finite element techniques. This is a Presidential Faculty Fellow (PFF) Award initially awarded in Fiscal Year 1992.