NSF Young Investigator: Novel Optoelectronic Devices Based on III-IV Semiconductor Heterostructures

介绍了一种基于II-V半导体异质结的新型光电子器件的研究方案。这些器件包括量子柱面发射激光器、MSM光电探测器和基于量子井子带间跃迁的器件。这项研究包括一个用于研究新型宽带隙光子材料的组成部分。所要研究的材料体系是以(In，Ga，Al)N为例的III-V氮化物。

A programs of research to study novel optoelectronic devices based on II-V semiconductor heterostructures is described. The devices include quantum cylinder surface emitting lasers, MSM photodetectors, and quantum well inter-subband transition-based devices. The research includes a component for the study of new, wide band gap photonic materials. The materials system to be studied is based on the III-V nitrides, with (in,Ga,Al)N as an example.