Experimental Investigation of Hot Filament Activated Chemical Vapor Deposition

这是一笔用于探索性研究（SGER）的小额赠款。它涉及使用热丝化学气相沉积（HFCVD）沉积高纯度的钛、镓和硼的氮化物薄膜。在该技术中，使用热钨丝来分解氨；然后，不稳定的含氮自由基与所需金属或类金属的气相形式反应，在半导体衬底（本研究中的硅）上沉积一层氮化薄膜。研究了沉积膜的组成、微观结构、光学性能和电学性能。利用x射线光电子能谱、原子力显微镜、电子显微镜、x射线衍射、卢瑟福后向散射、光致发光和电子/空穴迁移率对薄膜进行表征。通过实验测量和理论建模对该方法的气相化学进行了研究。本研究中生产的材料具有多种微电子应用的潜力，从绝缘体到led再到高温应用。目前迫切需要可靠的方法来生产高质量的薄膜材料。

Erdogen Gulari 9301386 This is a Small Grant for Exploratory Research (SGER). It is concerned with the use of hot filament chemical vapor deposition (HFCVD) to deposit high-purity films of nitrides of titanium, gallium, and boron. In this technique a hot tungsten filament is used to decompose ammonia; the unstable nitrogen-containing radicals then react with a vapor-phase form of the desired metal or metalloid to deposit a thin film of nitride on a semiconductor substrate (silicon in this study). Composition, microstructure, optical properties, and electrical properties of deposited films are studied. Films are characterized using X-ray photoelectron spectroscopy, atomic force microscopy, electron microscopy, X-ray diffraction, Rutherford backscattering, photoluminescence, and electron/hole mobility. The gas phase chemistry of the method is studied through experimental measurements and theoretical modelling. The materials produced in this study have potential for a variety of microelectronic applications, from insulators to LEDs to high- temperature applications. Reliable methods for producing high- quality thin films of materials are badly needed.