Research Initiation Award: Smart Spatial Light Modulators based on Amorphous Semiconductor Multilayer Structures.

WPC 2 $ B P Z $ Courier 10cpi #| x Õm x 6 x @ 8；HP LaserJet系列II HPLASEII。PRS x @， t 0 OpX @ courier 10cpi线打印机16.67cpi 2 x V F ' ？x x x， Õm x 6 x @ 8；X @ k + H hh, H H @；@ d: 5 f 7 d @ f b 3。[0] j: F D B @；^ 4:: d f @ b。Neifeld智能slm对下一代光学计算和处理非常重要。这类器件代表了实现互连、神经网络、图像处理和其他形式的并行光学计算的使能技术。本提案讨论了？Si:H/a Si x c1 x:H多层作为光学调制器，与Si VLSI兼容，因此可以与复杂的加工电子器件集成，从而产生具有可见波长操作，高速，广泛功能和简单，廉价制造要求的智能slm。初步研究表明，束缚态量子化将发生在非晶半导体材料体系中。将生产出高质量的组成材料和接口。通过样品沉积和表征，优化了制备工艺参数。其次，将制作多层结构以优化调制器特性。该组件涉及MQW样本的表征，以便可以分析量化效果，特别是带尾状态的影响。第三，将开发将这些调制器与CMOS VLSI集成的技术。最后一个组件将集中在实验技术，必要的制造非晶半导体调制器在现有的CMOS电子电路，并将利用MOSIS设施提供VLSI寻址电路。

WPC 2 $ B P Z $ Courier 10cpi #| x Õm x 6 X @ 8 ; X @ HP LaserJet Series II HPLASEII.PRS x @ , t 0 OpX @Courier 10cpi Line Printer 16.67cpi 2 X V F ` ? x x x , Õm x 6 X @ 8 ; X @ k + H H H , H H @ ; @ D : 5 F 7 D @ F B 3 . 0 j : F D B @ : . ^ 4 : : D F @ B . 3 0 ^ 9308251 Neifeld Smart SLMs are extremely important to the next generation of optical computing and processing. This class of device represents the enabling technology for the realization of interconnects, neural networks, image processing and other forms of parallel optical computing. This proposal discusses the use of a ? Si:H/a Si x C 1 x :H multilayers as optical modulators which are compatible with Si VLSI and can therefore be integrated with sophisticated processing electronics to yield smart SLMs offering visible wavelength operation, high speed, broad functionality and simple, inexpensive fabrication requirements. Initial efforts have produced evidence that bound state quantization will occur in amorphous semiconductor material system will be investigated. High quality constituent materials and interfaces will be produced. Through sample deposition and characterization fabrication parameters will be optimized. Second, multilayer structures will be fabricated to optimize modulator characteristics. This component involves characterization of MQW samples so that quantization effects and in particular the effects of band tail states, may be analyzed. Third, techniques will be developed to integrate these modulators with CMOS VLSI. This last component will focus on experim ental techniques necessary to fabricate amorphous semiconductor modulators on existing CMOS electronic circuits and will make use of the MOSIS facility to provide VLSI addressing circuits.