Modified In-Situ Rutherford Design for Early SIMOX Contamination Detection

小行星9360519 原位晶片分析提出，以检查SIMOX绝缘体上硅衬底的金属污染，在其制造的早期注入阶段。 在有源硅层中的任何金属的早期检测将大大提高杂质源跟踪和最终成本降低的机会。 在第一阶段，我们建议在SIMOX制造的离子注入站设计和制造一个原位，非破坏性的杂质检测能力。 几个设计优点，提高了检测灵敏度和易于实施。 第二阶段拟将原位装置转移到生产植入机器上，并结合设计修改或所需的改进。 随后将对制造材料进行原位无损检测，并根据检测和反馈进行离子束控制优化。 第三阶段是探针台的商业化，作为高能量更高电流注入站的产品，与IBIS产品一致。 国家可能期望从原位非破坏性晶片污染检测系统的开发中受益。 这种早期检测可以用作先进的质量控制工具，这将增强硅工业的产品开发和材料。 *** v S t $ $ ( F / 一 一 / 1件 符号Arial 5 CNOW New A " H * * = C R:\WW20USER\ABSTRACT.DOT 丹尼斯亨利丹尼斯亨利

9360519 Ryding Insitu wafer analysis is proposed in order to examine metallic contamination in SIMOX silicon-on-insulator substrates during the early implantation stage of their fabrication. Early detection of any metallics in the active silicon layer would greatly improve chances for impurity source tracking and ultimate cost reduction. In Phase I, we propose to design and fabricate an in-situ, non-destructive impurity detection capability at the ion implantation station of SIMOX fabrication. Several design advantages are incorporated which enhance detection sensitivity and ease of implementation. Phase II is proposed to transfer the in-situ apparatus onto the production implant machine, incorporating design modifications or required refinements. In-situ, non-destructive testing of manufactured material and ion beam control optimization based on the detection and feedback will ensue. Phase III is the commercialization of the probe station as a product for high energy higher current implantation stations, consistent with IBIS products. The nation may expect to benefit from the development of an in-situ, non-destructive wafer contamination detection system. Such early stage detection may be used as an advanced quality control tool which will enhance product development and material for the silicon industry. *** v s t $ $ ( F / A A / 1 Courier Symbol & Arial 5 Courier New A " h * * = C R:\WW20USER\ABSTRACT.DOT Denise Henry Denise Henry