Optimization of Amorphic Diamond(TM) Field Emitters
Optimization of Amorphic Diamond(TM) Field Emitters
批准号:
9361080
负责人:
Nalin Kumar
金额:
$6.48万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1994
资助国家:
美国
项目状态:
已结题
起止时间:
1994-04-01 至 1994-12-31
中文摘要
液晶显示(LCD)技术是目前最流行的平板显示器(FPD)平台,但它存在制造复杂和成本高的问题。场致发射显示器(FED)的演示样机的制作遇到了很大的困难,这被认为是FPD技术的跨越式发展。这主要归因于与传统微针尖型冷阴极相关的可制造性和可扩展性问题,这些冷阴极在所有当前的fed中用作电子源。近年来,非晶金刚石(AD)场发射冷阴极的发明可能是影响FPD技术的第一个革命性发现,因为最初的微针尖是在近20年前开发出来的。薄膜AD阴极具有非常低的有效功函数(约0.2eV),具有高密度的发射位点,高导热性,化学惰性,可在室温下沉积,并且与FDP材料和工艺兼容。我们建议集中精力了解这些薄膜的场发射现象,并对这些材料的优化进行系统的研究。更好地了解这些机制不仅有助于开发更高质量的AD排放物,而且还可能引导我们开发新的(非碳基)甚至更好的现场排放物。***
英文摘要
9361080 Kumar Liquid crystal display (LCD) technology is currently the most popular platform of flat panel displays (FPD), but it suffers from complex manufacturing and high cost problems. Great difficulties have been experienced in producing demonstration prototype field emission displays (FED) which have been promoted as the leap-frog FPD technology. This is mainly attributed to the manfacturability and scalability problems associated with the traditional micro-tip type of cold cathode used as the source of electrons in all current FEDs. The recent invention of Amorphic Diamond (AD) field emitter cold cathode is probably the first revolutionary discovery affecting FPD technology sine the original micro-tips were developed almost twenty years ago. The thin film AD cathodes have a very low effective work function (on the order of 0.2eV), have high density of emission sites, have high thermal conductivity, are chemically inert, can be deposited at room temperature, and are FDP material and process compatible. We are proposing to concentrate on the understanding of the field emission phenomenon from these films and to carry out a systematic study for optimization of these materials. A better understanding of these mechanisms will help not only in the development of higher quality AD emitters, but may also lead us to new (non-carbon based) and even better field emitters. ***
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会议论文
SBIR Phase II: Development of AlGaN Field Emission Cathodes
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批准号:0078637
-
项目类别:Standard Grant
-
资助金额:$40.0万
-
财政年份:2000
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负责人:Nalin Kumar
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依托单位:
SBIR Phase I: Development of AlGaN Field Emission Cathodes
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批准号:9860931
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项目类别:Standard Grant
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资助金额:$9.95万
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财政年份:1999
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负责人:Nalin Kumar
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依托单位:
A Non-Vacuum Field Emission Device
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批准号:9361273
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项目类别:Standard Grant
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资助金额:$6.49万
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财政年份:1994
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负责人:Nalin Kumar
-
依托单位: