ZnSe Substrates and Blue-Green Laser Diodes

这个小型企业创新研究第一阶段项目解决了ZnSSe蓝绿色LED和激光器开发中的关键衬底问题。近年来，由于蓝绿色LED和激光二极管在显示器、电子、通信和信息存储等领域的巨大市场潜力，人们对它们的研究和开发产生了极大的兴趣。在所有的半导体中，ZnSe基半导体是制造蓝绿激光器的主要候选者之一。虽然最近已经生产了基于ZnSe的LED和激光二极管，但是它们的寿命一直是关键问题。寿命不足的主要原因之一是缺乏器件质量的ZnSe衬底。在分析了过去和当前的ZnSe晶体生长技术和II-V1半导体化合物缺陷化学后，Fermionics公司提出了一种在低温下生长ZnSe晶体的创新方法。他们计划不仅要生长ZnSe单晶，而且要生产具有最低晶体缺陷的晶体。此外，他们还将研究通过原位杂质掺杂生产高电导率p型ZnSe的可行性。在第一阶段，将证明生长高质量ZnSe单晶的可行性。在第二阶段，将生产大的ZnSe晶体，并将制造ZnSSe LED和激光二极管。最后，在第三阶段，这些产品将商业化。

This Small Business Innovation Research Phase I project addresses the critical substrate issue in the development of ZnSSe blue-green LEDs and Lasers. Recently, there has been much interest in the research and development of blue-green LEDs and laser diodes due to the tremendous market potential for their applications in displays, electronics, communications and information storage. Among all the semiconductors, ZnSe based semiconductors are one of the prime candidates for the fabrication of blue-green lasers. Although ZnSe based LEDs and laser diodes have recently been produced, their lifetime has been a critical issue. One of the major causes of the insufficient lifetime is the lack of device quality ZnSe substrates. After analyzing past and current ZnSe crystal growth techniques and II-V1 semiconductor compound defect chemistry, Fermionics Corporation proposes an innovative method to grow ZnSe crystals at low temperatures. They plan to not only grow ZnSe single crystals, but also produce crystals with the lowest crystalline defects. In addition, they will study the feasibility of producing high conductivity p-type ZnSe by in situ impurity doping. In Phase I, the feasibility of growing high quality ZnSe single crystal will be demonstrated. In Phase II, large ZnSe crystals will be produced, and ZnSSe LEDs and laser diodes will be fabricated. Finally, in Phase III, these products will be commercialized.