Mode-locked,high power, semiconductor FIR/sub-mm laser

建议编号：ECS-9531933首席研究员：罗伯特·皮尔/中佛罗里达大学标题：锁模高功率半导体FIR/亚毫米激光器本研究将开发一种使用p-Ge的锁模高功率半导体FIR/亚毫米激光器。P-Ge激光器的可调谐范围为70至200 mm，而目前尚无其他固体激光器可调。通过新的实验测试，尤其是一种新的、不寻常的温度效应以及冷却速度和发射动力学之间的联系，将对激光的载流子动力学有更清晰的理解。在这个光源匮乏的地区开发一种实用的台式高功率激光器，将对分子和固态光谱、遥感和等离子体诊断等许多领域的发展产生重要的影响。除了自由电子激光之外，高可调谐声源尤其缺乏。通过用永久磁铁取代超导磁铁，这种激光器的发展成为一种紧凑型光源，对实际应用也很重要。

Proposal Number: ECS-9531933 Principal Investigator: Robert Peale/University of Central Florida Title: Mode-locked high power semiconductor FIR/sub-mm laser Abstract This research will develop a mode-locked high power semiconductor FIR/sub-mm laser, using p-Ge. The p-Ge laser is tunable for 70 to 200 mm where no other solid state laser is known. A clearer understanding of the carrier dynamics responsible for lasing will emerge via new experimental tests, especially a new and unusual temperature effect and the connection between cooling rate and emission dynamics. Development of a practical table-top high power laser in this source-poor region will have important ramifications for advancement in many fields, such as molecular and solid state spectroscopy, remote sensing and plasma diagnostics. High tunable tunable sources, other than FELS are especially lacking. Development of this laser as a compact source, made possible by replacing superconducting magnets with permanent magnets, is also important for practical applications.