SBIR Phase I: In-Situ Resistivity Measurement of Molecular Beam Epitaxy (MBE)-Grown Layers

这个小型企业创新研究第一阶段项目将生产一个毫米波传感器，远程测量薄层电阻率在真实的时间的分子束外延（MBE）生长的晶圆。通过MBE制造高性能半导体外延晶片需要精确掺杂和层厚度控制，以获得最佳的器件和电路性能。高再现性要求精确的掺杂和层厚度每次都相同。u晶片薄层电阻率是指示这些变量在最终晶片结构中是正确的关键校准参数。目前用于监测该参数的方法是在MBE机器的超高真空（UHV）室外部测量特殊校准晶片上的薄层电阻率。如果薄层电阻率超出规格，则必须在进一步处理实际产品晶片之前执行具有调整的生长条件的新校准运行。这需要通过装载锁额外地装载和卸载晶片，并且通常导致生产延迟和较低的MBE产量。这种创新的波浪传感器方法消除了所有这些浪费。 第一阶段工作的总体目标是证明在MBE机器内部使用完全位于UHV腔室外部的仪器原位监测GaAs或InP外延晶片（通常用于MMIC）的薄层电阻率的可行性。这种能力将简化生产过程，同时以降低的成本和更高的产量提供外延晶片的上级性能和精确的再现性。这将允许用于各种军事和商业系统应用的一致和可靠的最佳器件和电路（例如微波和毫米波集成电路）。 用于原位MBE测量的薄层电阻率传感器的开发将导致产品的改进和制造成本的降低，用于GaAs和InP外延片的大批量生产。然而，该仪器的应用并不局限于任何一种半导体材料。其具有用于在包括硅的主衬底上生长的任何中度到高度导电的外延材料的潜在用途。

This Small Business Innovative Research Phase I project will produce a MM-wave sensor that remotely measures sheet resistivity in real time of Molecular Beam Epitaxy (MBE) grown wafers. Manufacturing high performance semiconductor epitaxial wafers by MBE requires precision doping and layer thickness control to obtain optimum device and circuit performance. High reproducibility requires the precise doping and layer thickness to be the same every time. The u wafer sheet resistivity is a key calibration parameter that indicates these variables are correct in the final wafer structure. The current approach used for monitoring this parameter is to measure the sheet resistivity on special calibration wafers outside the ultra high vacuum (UHV) chamber of the MBE machine. If the sheet resistivity is out of specification a new calibration run with adjusted growth conditions must be performed before the actual product wafers may be further processed. This entails extra loading and unloading of wafers through the load locks and generally results in production delays and lower MBE throughput. This innovative wave sensor approach eliminates all of this waste. The overall objective for the Phase I effort is to demonstrate the feasibility of in situ monitoring of sheet resistivity of GaAs or InP epitaxial wafers (typically used for MMICs) inside an MBE machine with an instrument located completely outside the UHV chamber. This capability will streamline the production process while providing superior performance and precise reproducibility of the epi-wafers at a reduced cost and higher throughput. This will allow consistent and reliable optimum devices and circuits (e.g. microwave and mm-wave integrated circuits) for various military and commercial system applications. The development of a sheet resistivity sensor for in situ MBE measurements will result in product improvement and reduction of manufacturing costs for high volume production of GaAs and InP epitaxial wafers. The instrument's application, however, is not restricted to any one semiconductor material. It has potential use for any moderately to highly conducting epitaxial material grown on a host substrate including silicon.