Growth Mechanism of Hg-Based Superconducting Cuprate Thin Films

本研究项目主要研究氢基铜酸盐（HgBaCaCuO）超导体薄膜在快速升温蒸汽退火（FTRA）中的薄膜生长机制。通过将工艺参数与样品物理性质（包括相纯度、膜/衬底界面结构和表面形貌、Tc、Jc等超导特性）相关联，研究FTRA过程中的薄膜生长机制。人们期望FTRA技术可以最大限度地减少由所涉及的hg化合物的高挥发性、CaHgO2的形成以及薄膜/衬底界面的化学反应引起的问题。以Na， Tl或Re为掺杂剂的化学掺杂辅助生长hg基铜薄膜也将被研究，以获得高纯度的外延Hg-1223薄膜。稀土石榴石和LaAlO3将作为衬底用于制造大面积的汞基铜晶片。该项目是多学科结合基础材料化学/物理和材料加工研究与先进的表征工具和分析方法，以解决前沿问题，在一个具有高科学价值和潜在的技术效益的主题领域。该研究将为先进的微波和微电子器件的几个方面提供基础的材料科学知识。从本研究项目中获得的知识和理解有望通过为设计和生产改进的材料以及材料加工路线提供基本的理解和基础，从而为提高先进设备的性能做出一般的贡献。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊

9632279 Wu This research project addresses film growth mechanisms in fast temperature ramping Hg-vapor annealing(FTRA) of Hg-based cuprate(HgBaCaCuO) superconductor films. The film growth mechanism in the FTRA process will be studied by correlating processing parameters to the sample physical properties including phase purity, film/substrate interface structure and surface morphology, Tc, Jc, and other superconducting characteristics. Expectations are that the FTRA technique can minimize problems caused by the high volatility of the Hg-compounds involved, formation of CaHgO2, and chemical reactions at the film/substrate interface. Chemical-doping-assisted growth of Hg-based cuprate films using Na, Tl, or Re as the dopant will also be investigated to achieve high-purity epitaxial Hg-1223 thin films. Rare-earth garnets and LaAlO3 will be used as substrates in the fabrication of large-area Hg-based cuprate wafers. %%% The project is multidisciplinary combining fundamental materials chemistry/physics and materials processing studies with advanced characterization tools and analysis methods to address forefront issues in a topical area of high scientific value and potential technological benefits. The research will contribute basic materials science knowledge at a fundamental level to several aspects of advanced microwave and microelectronic devices. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials, and materials processing routes. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***