Quantum Engineering of Metallic Thin Film Growth

9705406 Plummer这项FRG建议在实验和理论上解决了基础材料科学问题，这是一个由四所大学和ORNL的研究人员参与的合作项目，将专业知识和设施结合在一起，探索外延的新概念，即“电子增长”机制。在这一机制中，形成原子扁平薄膜的临界厚度对应于二维电子系统可以被限制在真空和衬底之间的势垒中的厚度。这种神奇的薄膜厚度取决于量子井态的性质，也就是说，原子的总体排列是由电子占据某些量子力学状态的偏好决定的。为该项目联合提供的特别资源包括高分辨率光电发射、表面X射线散射、扫描探针显微镜、高分辨率非弹性电子散射和超级计算设备。拟议的研究强调通过理论和实验研究相结合的方式来理解基本机制和过程。该项目解决了材料科学中具有高度技术相关性的热门领域中的前沿材料科学研究问题。这项研究将在基础水平上为对电子/光子设备和集成电路至关重要的金属-半导体接口的重要方面贡献基础材料科学知识。此外，从研究中获得的基本知识和理解有望通过为未来量子力学器件设计和制造改进的材料和结构提供基本的理解和基础，从而有助于提高先进器件和电路的性能。这一研究计划可能导致金属异质外延的新范式，这对电子器件和微电子电路的制造具有重要意义。***

9705406 Plummer This FRG proposal addresses, experimentally and theoretically, basic materials science issues in a collaborative program involving researchers at four universities and ORNL, combining expertise and facilities to explore a new concept in epitaxy, an "electronic growth" mechanism. Within this mechanism the critical thickness for the formation of an atomically flat film corresponds to the thickness where the two-dimensional electronic system can be confined in a potential well between the vacuum and the substrate. This magic film thickness depends on the nature of quantum well states, that is, the overall arrangement of atoms is dictated by the preference of electrons to occupy certain quantum-mechanical states. Special resources made available jointly for this project include high resolution photo-emission, surface x-ray scattering, scanning probe microscopy, high resolution inelastic electron scattering, and super computing equipment. The proposed research emphasizes understanding of fundamental mechanisms and processes through a combination of theoretical and experimental studies. %%% The project addresses forefront materials science research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of metal-semiconductor interfaces critical to electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials and structures for the quantum mechanical devices of the future. The research program may lead to a new paradigm for metal heteroepitaxy, which is of significance in the fabrication of electronic devices and microelectronics circuitry. ***