SBIR Phase I: Type-II Mid-Infrared Lasers Grown on Compliant Universal Substrates

9760193林应用光电将开发中红外(3-5微米)半导体激光器，能够在高于220K的温度下工作，脉冲长度大于10微秒，平均输出功率超过10 mW。第二类量子阱激光器将生长在GaAs通用衬底上，允许外延倒装，并使用980 nm InGaAs二极管激光器阵列作为泵浦光源。这项技术的商业应用包括现场过程控制、远程化学传感、红外光谱和葡萄糖分析。

9760193 Lin Applied Optoelectronics will develop mid infra-red (3-5 microns) semiconductor lasers, capable of operating at temperatures greater than 220K, with pulse lengths greater than 10 microseconds, and at average output powers exceeding 10 mW. Type II quantum well lasers will be grown on GaAs universal substrates, allowing epitaxial side-down mounting, and using 980 nm InGaAs diode laser arrays as a pump source. Commercial applications for this technology include in-situ process control, remote chemical sensing, IR spectroscopy and glucose analysis.