Electronic Structure Engineering of Antimony-based Optoelectronic Devices

PI在这里提出了一个连贯的理论程序来研究锑基异质结构的光电特性。在使用基于（大致）晶格匹配的AlGaSb/InAs材料系统的材料的光电器件设计中，已经证明了很大的灵活性。这些材料已被用于中波红外（MWIR）激光器、长波红外（LWIR）探测器和共振带间隧道二极管（RITD）。这些MWIR和LWIR激光器和探测器在环境监测和非侵入性医疗传感方面具有广谱应用。RITD具有任何RTD器件中最大的峰谷电流比，适用于各种微波和快速数字器件应用。对于每种类型的器件，锑基异质结构的预期性能都优于竞争系统。目前实现这些优越性能的障碍是：(1)生长和加工技术的成熟，(2)器件元件材料性能的详细实验探索，以及(3)材料和器件的理论认识和建模。锑基异质结构的广泛选择和应用使得最后一类的努力对该领域的进一步发展至关重要。在提出的努力中，在理解材料和器件的性质以及设计更好的器件方面的进展将主要通过以下努力来完成：(1)发展适当和准确的输运模型，(2)提高目前使用的电子结构模型的准确性，以及(3)解释混合阴离子系统中的界面化学和结构。侦探在过去，他们已经与非学术机构（包括工业和政府实验室）进行了多次合作，并致力于在未来继续这些努力。具体地说，RITD工作将与HRL和JPL的工作，以及HRL的接口建模工作进行协调。

Flatte'0000556The PI presents here a coherent theoretical program investigating the optoelectronic properties of antimony-based heterostructures. Great flexibility has already been demonstrated in the design of optoelectronic devices which use materials based on the (roughly) lattice matched AlGaSb/InAs material system. Such materials have been used in mid-wave infrared (MWIR) lasers, long-wave infrared (LWIR) detectors, and resonant interband tunneling diodes (RITD's). These MWIR and LWIR lasers and detectors have broad spectroscopic applications to environmental monitoring and non-invasive medical sensing. RITD's, which have the largest peak to valley current ratios of any RTD devices, are intended for use in a variety of microwave and fast digital device applications.For each type of device the expected properties of antimony-based heterostructures are superior to those of competing systems. Current barriers to the realization of these superior properties are: (1) maturation of growth and processing technology, (2) detailed experimental probes of the material properties of device elements, and (3) theoretical understanding and modeling of materials and devices. The wide range of choices and applications of antimony-based heterostructures has made efforts in this last category vital to further progress in the field. In the proposed effort progress in understanding the properties of materials and devices, and in designing better devices, will be accomplished principally through efforts to (1) develop appropriate and accurate transport models, (2) improve the accuracy of the electronic structure models currently used, and (3) account for interface chemistry and structure in this mixed-anion system. The P.I.'s have been engaged in the past in several collaborative efforts with non-academic institutions, including industrial and government laboratories, and they are committed to continuing these efforts in the future. Specifically, the RITD effort will be coordinated with efforts at HRL and JPL, and the interface modeling effort at HRL.