Experiments and Modeling of Nanoscale Pattern Formation in Aluminum Electrodissolution

摘要提案标题：SGER：铝电解溶解中纳米尺度图案形成的实验和建模提案编号：CTS-0084425主要研究者：Duane Johnson机构： 亚拉巴马大学塔斯卡卢萨本项目的目标是使用新的阳极溶解技术，以产生高度有序的，纳米尺寸的铝孔。 在一系列实验中，将使用具有111、110和100取向的单晶铝基板。 互补的数值模拟将演示晶体取向如何影响电解抛光过程中的图案发展。 用于产生纳米级图案的程序是在酸性醇-水溶液中在铝基板上施加恒定偏压。 所施加的电压使铝以铝离子的形式溶解到溶液中。 虽然已经观察到条纹图案，但这些不是当前工业上感兴趣的。 有利于形成有序的六边形图案的条件将被探讨。 预计将与亚拉巴马大学信息技术材料实验室合作。 该设施是NSF材料研究科学与工程中心（MRSEC）。 学生将使用该设施进行本项目的工作。 纳米尺寸孔的有序阵列形成了许多新兴技术的基础，包括磁介质、光子带隙滤波器和分子筛。 一种新的制造方法，产生这样的阵列将是潜在的有用的这些设备的发展。

AbstractProposal Title: SGER: Experiments and Modeling of Nanoscale Pattern Formation in Aluminum ElectrodissolutionProposal Number: CTS-0084425Principal Investigator: Duane JohnsonInstitution: University of Alabama TuscaloosaThe objective of this project is to use novel anodic dissolution techniques to produce highly ordered, nanometer-sized holes in aluminum. In a series of experiments, single crystal aluminum substrates with 111, 110, and 100 orientations will be used. Complementary numerical simulations will demonstrate how the crystal orientation affects the pattern development during electropolishing. The procedure for producing nanoscale patterns is to apply a constant bias voltage on the aluminum substrate in an acidic alcohol-water solution. The applied voltage causes the aluminum to dissolve as aluminum ions into the solution. Although striped patterns have been observed, these are not of current industrial interest. Conditions that favor the formation of ordered hexagonal patterns will be explored. Collaboration with the University of Alabama laboratory on Materials for Information Technology (MINT) is anticipated. This facility is an NSF Materials Research Science and Engineering Center (MRSEC). Students will have use of the facility for work on this project. Ordered arrays of nanometer-sized holes form the basis for a number of emerging technologies including magnetic media, photonic bandgap filters, and molecular sieves. A new fabrication method that produces such arrays would be potentially useful in the development of these devices.