SBIR Phase I: A Novel Ultra-High Resolution Technique for the Fabrication of Nanoelectronic Device Arrays

这个小型企业创新研究(SBIR)第一阶段项目将开发一种制造周期性纳米电子设备阵列的新方法。由于现有光刻方法的分辨率有限，100 nm以下的结构处理面临着巨大的挑战。这项拟议的技术将解决现有纳米制造方法的不足，通过在分子自组装纳米孔荫罩中直接生长纳米结构，提供了前所未有的对纳米结构尺寸的原子尺度控制。在这项拟议的研究中，将使用有机表面活性剂分子自组装具有~3-30 nm圆柱孔的二氧化硅荫罩或纳米孔道。硅纳米棒将通过化学气相沉积和溅射两种方法在纳米井中生长，然后化学去除荫罩。制作了一个硅纳米棒LED阵列，以验证该方法的可行性以及硅纳米棒的量子尺寸效应。如果成功，这种具有成本效益、高吞吐量和超高精度的技术将在传感器、处理器、存储器和显示器等广泛的电子设备阵列应用中发挥作用，并提供增强的小型化、速度和功耗。拟议的技术将为制造平板显示器、传感器阵列、量子点、纳米磁性、图像和信号处理器提供显著改进的纳米处理能力。它在商业微电子和图像处理行业将有广泛的潜在应用。

This Small Business Innovation Research (SBIR) Phase I project will develop a new approach for the fabrication of periodic nanoelectronic device arrays. Processing of structures on the sub-100nm scale poses significant challenges due to limited resolution of available lithographic methods. The proposed technique will address the deficiencies of the existing nanofabrication approaches by directly growing nanostructures inside a molecularly self-assembled NanoWell shadow mask, which offers an unprecedented atomic-scale control over the nanostructure size. During the proposed research, a silica shadow mask with cylindrical pores ~3-30 nm, or NanoWells, will be self-assembled employing organic surfactant molecules. Silicon nanorods will be grown inside NanoWells by both CVD and sputtering, followed by chemical removal of a shadow mask. An array of Si nanorod LEDs will be fabricated to demonstrate the feasibility of the proposed approach as well as the quantum size effect for the Si nanorods. If successful, this cost effective, high-throughput, and ultra-high precision technique will figure into a wide range of electronic device array applications such as sensors, processors, memories and displays, and provide enhanced miniaturization, speed, and power reduction. The proposed technique will offer the dramatically improved nanoprocessing capabilities for the fabrication of flat panel displays, sensor arrays, quantum dots, nanomagnetics, image and signal processors. It will have a broad range of potential applications in commercial microelectronics and image processing industries.